SFH4547 查看數據表（PDF） - OSRAM GmbH
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SFH4547 Datasheet PDF : 9 Pages
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Version 1.4
SFH 4547
Maximum Ratings (TA = 25 °C)
Parameter
Operation and storage temperature range
Reverse voltage
Forward current
Surge current
(tp ≤ 100 µs, D = 0)
Power consumption
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance junction - ambient 1) page 8
Characteristics (TA = 25 °C)
Parameter
Peak wavelength
(IF = 100 mA, tp = 20 ms)
Centroid wavelength
(IF = 100 mA, tp = 20 ms)
Spectral bandwidth at 50% of Imax
(IF = 100 mA, tp = 20 ms)
Half angle
Dimensions of active chip area
Rise and fall time of Ie ( 10% and 90% of Ie max)
(IF = 100 mA, RL = 50 Ω)
Forward voltage
(IF = 100 mA, tp = 20 ms)
Forward voltage
(IF = 1 A, tp = 100 µs)
Reverse current
(VR = 5 V)
Total radiant flux
(IF=100 mA, tp=20 ms)
Temperature coefficient of Ie or Φe
(IF = 100 mA, tp = 20 ms)
Temperature coefficient of VF
(IF = 100 mA, tp = 20 ms)
Temperature coefficient of wavelength
(IF = 100 mA, tp = 20 ms)
Symbol
Top; Tstg
VR
IF
IFSM
Ptot
VESD
RthJA
Values
-40 ... 100
5
100
1
180
2
450
Unit
°C
V
mA
A
mW
kV
K/W
(typ)
(typ)
(typ)
Symbol
λpeak
λcentroid
∆λ
Values
950
940
42
Unit
nm
nm
nm
(typ)
(typ)
ϕ
LxW
(typ)
tr, tf
(typ (max)) VF
(typ (max)) VF
IR
(typ)
Φe
(typ)
TCI
(typ)
TCV
(typ)
TCλ
± 30
0.3 x 0.3
12
°
mm x
mm
ns
1.5 (≤ 1.8)
V
2.3 (≤ 3)
V
not designed for µA
reverse operation
55
mW
-0.5
%/K
-1.3
mV / K
0.3
nm / K
2015-12-23
2
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