SFT1450 查看數據表（PDF） - SANYO -> Panasonic

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SFT1450

N-Channel Silicon MOSFET

SANYO -> Panasonic 

Electrical Characteristics at Ta=25°C

SFT1450

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

ID=1mA, VGS=0V

VDS=40V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=10.5A

ID=10.5A, VGS=10V

ID=5.5A, VGS=4.5V

VDS=20V, f=1MHz

VDS=20V, f=1MHz

VDS=20V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

VDS=20V, VGS=10V, ID=21A

VDS=20V, VGS=10V, ID=21A

VDS=20V, VGS=10V, ID=21A

IS=21A, VGS=0V

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=20V

ID=10.5A

RL=1.9Ω

D

VOUT

SFT1450

P.G

50Ω

S

Ratings

Unit

min.

typ.

max.

40

V

1

μA

±10

μA

1.7

2.6

V

5.4

S

21

28 mΩ

40

56 mΩ

715

pF

85

pF

65

pF

10

ns

42

ns

42

ns

38

ns

14.4

nC

3.8

nC

3.1

nC

0.96

1.2

V

ID -- VDS

21

20

19

4.5V

Tc=25°C

Single pulse

18

17

16

15

14

13

12

11

10

4.0V

9

8

7

6

5

VGS=3.5V

4

3

2

1

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source Voltage, VDS -- V IT15551

30

VDS=10V

Single pulse

25

ID -- VGS

20

15

10

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

Gate-to-Source Voltage, VGS -- V IT15552

No. A1743-2/4

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