DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SG1846 查看數據表(PDF) - Microsemi Corporation

零件编号
产品描述 (功能)
生产厂家
SG1846
Microsemi
Microsemi Corporation Microsemi
SG1846 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
SG1846
ELECTRICAL CHARACTERISTICS (continued)
Parameter
Under-Voltage Lockout Section
Start-Up Threshold
Threshold Hysteresis
Total Standby Current
Supply Current
Test Conditions
SG1846
SG2846
SG3846
Units
Min. Typ. Max. Min. Typ. Max.
7.7 8.0
0.75
7.7 8.0 V
0.75
V
17 21
17 21 mA
Note 4. These parameters although guaranteed over the recommended
operating conditions, are not tested in production.
Note 5. Parameter measured at trip point of latch with VPIN 5 = VREF ,
VPIN 6 = 0V.
Note 6. Amplifier gain defined as :
G=
VPIN 7
VPIN 4
; V = 0V to 1.0V
PIN 4
Note 7. Current into Pin 1 guaranteed to latch circuit in shutdown state.
Note 8. Current into Pin 1 guaranteed not to latch circuit in shutdown
state.
Note 9. RT = 10K, CT = 4.7nF
CHARACTERISTIC CURVES
FIGURE 1.
REFERENCE VOLTAGE VS. TEMPERATURE
FIGURE 2.
VREF SHORT CIRCUIT CURRENT VS. TEMPERATURE
FIGURE 3.
CURRENT SENSE THRESHOLD
VS. ERROR AMPLIFIER OUTPUT
FIGURE 4.
CURRENT SENSE GAIN VS. TEMPERATURE
FIGURE 5.
OSCILLATOR VALLEY VOLTAGE VS. TEMPERATURE
FIGURE 6.
OSCILLATOR PEAK VOLTAGE VS. TEMPERATURE
4/90 Rev 1.1 2/94
Copyright © 1994
LINFINITY Microelectronics Inc.
4
11861 Western Avenue Garden Grove, CA 92841
(714) 898-8121 FAX: (714) 893-2570

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]