SG50N06D2S 查看數據表（PDF） - Sirectifier Electronics
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SG50N06D2S Datasheet PDF : 2 Pages
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SG50N06D2S, SG50N06D3S
Discrete IGBTs
Symbol
Test Conditions
gts
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC=IC90; VCE=10V
Pulse test, t 300us, duty cycle 2%
VCE=25V; VGE=0V; f=1MHz
IC=IC90; VGE=15V; VCE=0.5VCES
Inductive load, TJ=25oC
IC=IC90; VGE=15V; L=100uH
VCE=0.8VCES; RG=Roff=2.7
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
Inductive load, TJ=125oC
IC=IC90; VGE=15V; L=100uH
VCE=0.8VCES; RG=Roff=2.7
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
(TJ=25oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
35
50
S
4100
290
50
110
30
35
50
50
110
150
3.0
50
60
3.0
200
250
4.2
0.05
pF
nC
ns
ns
250
ns
220
ns
4.0
mJ
ns
ns
mJ
ns
ns
mJ
0.50
K/W
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
VF
IR
IRM
trr
RthJC
IF=60A; TVJ=150oC
Pulse test, t 300us, duty cycle d
TVJ=25oC; VR=VRRM
TVJ=150oC
2%; TVJ=25oC
IF=IC90; VGE=0V; -diF/dt=100A/us; VR=540V
IF=1A; -di/dt=50A/us; VR=30V; TJ=25oC
(TJ=25oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
1.75
V
2.40
650
uA
2.5
mA
8.0
A
35
ns
0.85
K/W
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