SG45N12T 查看數據表（PDF） - Sirectifier Global Corp.

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SG45N12T

Discrete IGBTs

Sirectifier Global Corp. 

SG45N12T

E

C(TAB)

C

G

SG45N12T

Discrete IGBTs

Dimensions TO-247AD

G=Gate, C=Collector,

E=Emitter,TAB=Collector

Dim. Millimeter

Min. Max.

A 19.81 20.32

B 20.80 21.46

C 15.75 16.26

D 3.55 3.65

E 4.32 5.49

F

5.4 6.2

G 1.65 2.13

H

- 4.5

J

1.0 1.4

K 10.8 11.0

L

4.7 5.3

M

0.4 0.8

N

1.5 2.49

Inches

Min. Max.

0.780 0.800

0.819 0.845

0.610 0.640

0.140 0.144

0.170 0.216

0.212 0.244

0.065 0.084

-

0.177

0.040 0.055

0.426 0.433

0.185 0.209

0.016 0.031

0.087 0.102

Symbol

Test Conditions

Maximum Ratings

Unit

VCES

VCGR

TJ=25oC to 150oC

TJ=25oC to 150oC; RGE=1 M ;

1200

1200

V

VGES Continuous

VGEM Transient

IC25 TC=25oC; limited by leads

IC90 TC=90oC

ICM TC=25oC, 1 ms

SSOA VGE=15V; TVJ=125oC; RG=5

(RBSOA) Clamped inductive load

PC TC=25oC

±20

V

±30

75

45

A

180

ICM=90

@ 0.8 VCES

A

300

W

TJ

-55...+150

TJM

150

oC

Tstg

-55...+150

Maximum lead temperature for soldering

300

oC

1.6 mm (0.062 in.) from case for 10s

Maximum Tab temperature for soldering SMD devices for 10s

260

oC

Md Mounting torque (M3)

Weight

1.13/10

6

Nm/Ib.in.

g

(TJ=25oC, unless otherwise specified)

Symbol

Test Conditions

Characteristic Values

Unit

min.

typ.

max.

BVCES

VGE(th)

ICES

IGES

VCE(sat)

IC=1mA; VGE=0V

IC=750uA; VCE=VGE

VCE=VCES;

TJ=25oC

VGE=0V;

TJ=125oC

VCE=0V; VGE=±20V

IC=IC90; VGE=15V

1200

2.5

V

5.0

V

250

uA

2

mA

±100

nA

2.5

V

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