SG50N06S 查看數據表（PDF） - Sirectifier Global Corp.

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SG50N06S

Discrete IGBTs

Sirectifier Global Corp. 

SG50N06S, SG50N06DS

Discrete IGBTs

EC

E

G

SG50N06S

Dimensions SOT-227(ISOTOP)

G=Gate, C=Collector,

E=Emitter

SG50N06DS

Dim.

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

Millimeter

Min.

Max.

31.50

7.80

31.88

8.20

4.09

4.29

4.09

4.29

4.09

14.91

4.29

15.11

30.12

37.80

30.30

38.20

11.68

8.92

12.22

9.60

0.76

12.60

0.84

12.85

25.15

1.98

25.42

2.13

4.95

26.54

5.97

26.90

3.94

4.42

4.72

4.85

24.59

-0.05

25.07

0.1

3.30

0.780

4.57

0.830

Inches

Min.

Max.

1.240

0.307

1.255

0.323

0.161

0.161

0.169

0.169

0.161

0.587

0.169

0.595

1.186

1.489

1.193

1.505

0.460

0.351

0.481

0.378

0.030

0.496

0.033

0.506

0.990

0.078

1.001

0.084

0.195

1.045

0.235

1.059

0.155

0.186

0.174

0.191

0.968

-0.002

0.987

0.004

0.130

19.81

0.180

21.08

Symbol

Test Conditions

VCES

VCGR

TJ=25oC to 150oC

TJ=25oC to 150oC; RGE=1 M ;

VGES Continuous

VGEM Transient

IC25 TC=25oC

IC90 TC=90oC

ICM TC=25oC, 1 ms

SSOA VGE=15V; TVJ=125oC; RG=10

(RBSOA) Clamped inductive load, L=30uH

PC TC=25oC

TJ

TJM

Tstg

Md Mounting torque

Terminal connection torque(M4)

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Ratings

600

600

±20

±30

75

50

200

ICM=100

@ 0.8 VCES

250

-55...+150

150

-55...+150

1.5/13

1.5/13

30

300

Unit

V

V

A

A

W

oC

Nm/Ib.in.

g

oC

Symbol

Test Conditions

BVCES

VGE(th)

ICES

IGES

VCE(sat)

IC=250uA; VGE=0V

IC=250uA; VCE=VGE

VCE=0.8VCES;

VGE=0V;

TJ=125oC

VCE=0V; VGE=±20V

IC=IC90; VGE=15V

(TJ=25oC, unless otherwise specified)

Characteristic Values

Unit

min.

typ.

max.

600

V

2.5

5

V

200

uA

1

mA

±100

nA

2.5

V

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