SG50N06S 查看數據表（PDF） - Sirectifier Global Corp.
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SG50N06S Datasheet PDF : 2 Pages
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SG50N06S, SG50N06DS
Discrete IGBTs
Symbol
Test Conditions
gts
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC=IC90; VCE=10V
Pulse test, t 300us, duty cycle 2%
VCE=25V; VGE=0V; f=1MHz
IC=IC90; VGE=15V; VCE=0.5VCES
Inductive load, TJ=25oC
IC=IC90; VGE=15V; L=100uH
VCE=0.8VCES'; RG=Roff=2.7
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
Inductive load, TJ=125oC
IC=IC90; VGE=15V; L=100uH
VCE=0.8VCES'; RG=Roff=2.7
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
(TJ=25oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
25
35
S
4000
340
pF
100
110
180
30
50
nC
40
100
50
ns
30
ns
200
ns
150
ns
3
mJ
50
ns
25
ns
3
mJ
280
ns
250
ns
4.2
mJ
0.50
K/W
0.05
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
VF
IR
IRM
trr
RthJC
IF=60A; TVJ=150oC
Pulse test, t 300us, duty cycle d
TVJ=25oC; VR=VRRM
TVJ=150oC
2%; TVJ=25oC
IF=IC90; VGE=0V; -diF/dt=100A/us; VR=540V
IF=1A; -di/dt=50A/us; VR=30V; TJ=25oC
(TJ=25oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
1.75
V
2.40
650
uA
2.5
mA
8.0
A
35
ns
0.85
K/W
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