SG50N06T 查看數據表（PDF） - Sirectifier Global Corp.
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SG50N06T Datasheet PDF : 2 Pages
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SG50N06T, SG50N06DT
Discrete IGBTs
Symbol
Test Conditions
gts
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
RthJC
RthCK
IC=IC90; VCE=10V
Pulse test, t 300us, duty cycle 2%
VCE=25V; VGE=0V; f=1MHz
IC=IC90; VGE=15V; VCE=0.5VCES
Inductive load, TJ=25oC
IC=IC90; VGE=15V
VCE=0.8VCES; RG=Roff=2.7
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
Inductive load, TJ=25oC
IC=IC90; VGE=15V
VCE=0.8VCES; RG=Roff=2.7
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
(TJ=25oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
25
35
S
4000
340
100
110
30
40
50
50
200
150
3.0
50
50
2
280
250
4.2
0.25
pF
180
50
nC
100
ns
ns
300
ns
270
ns
6.0
mJ
ns
ns
mJ
ns
ns
mJ
0.62
K/W
K/W
Reverse Diode (FRED)
Symbol
Test Conditions
VF
IRM
trr
RthJC
IF=IC90; VGE=0V;
Pulse test; t 300ms, duty cycle 22%
IF=IC90; VGE=0V; -diF/dt=100A/ms
VR=100V;
IF=1A; -di/dt=200A/ms; VR=30V
(TJ=25oC, unless otherwise specified)
Characteristic Values
Unit
min.
typ.
max.
2.5
V
2
2.5
A
175
ns
35
50
ns
0.65
K/W
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