SGP23N60UF(2013) 查看數據表（PDF） - Fairchild Semiconductor
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SGP23N60UF Datasheet PDF : 7 Pages
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Absolute Maximum Ratings TC = 25C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25C
@ TC = 100C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25C
@ TC = 100C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
SGP23N60UF
600
20
23
12
92
100
40
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
W
W
C
C
C
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1.2
62.5
Unit
C/W
C/W
Electrical Characteristics of the IGBT TC = 25C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min.
BVCES
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA
600
BVCES/
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
IC = 12mA, VCE = VGE
3.5
IC = 12A, VGE = 15V
--
IC = 23A, VGE = 15V
--
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
--
--
--
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
--
--
VCC = 300 V, IC = 12A,
--
RG = 23, VGE = 15V,
--
Inductive Load, TC = 25C
--
--
--
--
--
VCC = 300 V, IC = 12A,
--
RG = 23, VGE = 15V,
--
Inductive Load, TC = 125C
--
--
--
Typ. Max. Unit
--
--
V
0.6
--
V/C
--
250
uA
-- ± 100 nA
4.5 6.5
V
2.1 2.6
V
2.6
--
V
720
--
pF
100
--
pF
25
--
pF
17
--
ns
27
--
ns
60 130
ns
70 150
ns
115
--
uJ
135
--
uJ
250 400
uJ
23
--
ns
32
--
ns
100 200
ns
220 250
ns
205
--
uJ
320
--
uJ
525 800
uJ
©1999 Fairchild Semiconductor Corporation
2
SGP23N60UF Rev. C0
www.fairchildsemi.com
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