SGP23N60UF(2013) 查看數據表（PDF） - Fairchild Semiconductor
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SGP23N60UF Datasheet PDF : 7 Pages
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1200
1000
800
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
600
Coes
400
200
Cres
0
1
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 12A
TC = 25℃
TC = 125℃
Toff
Tf
Toff
100
50
1
10
Gate Resistance, RG []
Tf
100 200
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 12A
100 TC = 25℃
Ton
TC = 125℃
Tr
10
1
10
Gate Resistance, RG []
100 200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Eoff
Eon
Eon
Eoff
100
30
1
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 12A
TC = 25℃
TC = 125℃
10
100 200
Gate Resistance, RG []
Fig 10. Switching Loss vs. Gate Resistance
200
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 23
100 TC = 25℃
TC = 125℃
Ton
Tr
10
4
8
12
16
20
24
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
1000
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 23
TC = 25℃
TC = 125℃
Toff
Tf
100
Tf
50
4
Toff
8
12
16
20
24
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
©1999 Fairchild Semiconductor Corporation
4
SGP23N60UF Rev. C0
www.fairchildsemi.com
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