SGR15N40L 查看數據表（PDF） - Fairchild Semiconductor

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SGR15N40L

Insulated Gate Bipolar Transistors

Fairchild Semiconductor 

SGR15N40L / SGU15N40L

IGBT

General Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench

gate structure provide superior conduction and switching

performance in comparison with transistors having a planar

gate structure. They also have wide noise immunity. These

devices are very suitable for strobe applications

Features

• High input impedance

• High peak current capability (130A)

• Easy gate drive

Application

Strobe flash.

C

C

G E D-PAK

G C E I-PAK

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol

VCES

VGES

ICM (1)

PC

TJ

Tstg

TL

Description

Collector - Emitter Voltage

Gate - Emitter Voltage

Pulsed Collector Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

purposes, 1/8” from case for 5 seconds

@ TC = 25°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC

RθJA (D-PAK)

RθJA (I-PAK)

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)

Thermal Resistance, Junction-to-Ambient

Notes :

(2) Mounted on 1” square PCB (FR4 or G-10 Material)

G

E

SGR / SGU15N40L

400

±6

130

45

-40 to +150

-40 to +150

300

Typ.

--

--

--

Max.

3.0

50

110

Units

V

V

A

W

°C

°C

°C

Units

°C/W

°C/W

°C/W

©2002 Fairchild Semiconductor Corporation

SGR15N40L / SGU15N40L Rev. A1

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