SGS6N60 查看數據表（PDF） - Fairchild Semiconductor
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SGS6N60 Datasheet PDF : 7 Pages
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400
350
300
250
200
150
100
50
0
1
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Coes
Cres
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
600
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 3A
TC = 25℃
TC = 125℃
100
50
1
10
100
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Toff
Toff
Tf
Tf
400
200
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 80Ω
100 TC = 25℃
TC = 125℃
Ton
Tr
10
1
2
3
4
5
6
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2001 Fairchild Semiconductor Corporation
100
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 3A
Ton
TC = 25℃
TC = 125℃
Tr
10
1
10
100
400
Gate Resistance, RG [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
300
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 3A
TC = 25℃
100 TC = 125℃
Eon
Eoff
Eoff
10
5
1
10
100
400
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
500
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 80Ω
TC = 25℃
TC = 125℃
Toff
100 Tf
50
1
2
3
4
5
6
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGS6N60UF Rev. A
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