SGB04N60 查看數據表（PDF） - Infineon Technologies

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SGB04N60

Fast IGBT in NPT-technology

Infineon Technologies 

SGP04N60, SGB04N60

SGD04N60, SGU04N60

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

Published by

11

Figure E. Dynamic test circuit

Leakage inductance L σ =180nH

an d Stray capacity Cσ =180pF.

Jul-02

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