SGB04N60 查看數據表（PDF） - Infineon Technologies
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SGB04N60 Datasheet PDF : 12 Pages
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SGP04N60, SGB04N60
SGD04N60, SGU04N60
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
C
G
E
P-TO-252-3-1 (D-PAK) P-TO-220-3-1
(TO-252AA)
(TO-220AB)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO-251-3-1 (I-PAK)
(TO-251AA)
P-TO-263-3-2 (D²-PAK)
(TO-263AB)
Type
SGP04N60
SGB04N60
SGD04N60
SGU04N60
VCE
IC
VCE(sat)
Tj
Package
Ordering Code
600V 4A
2.3V
150°C TO-220AB
Q67040-S4443
TO-263AB
Q67040-S4442
TO-252AA(DPAK) Q67041-A4708
TO-251AA(IPAK) Q67040-S4444
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 4 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
Unit
600
V
A
9.4
4.9
19
19
±20
V
25
mJ
10
µs
50
W
-55...+150
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02
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