SGP04N60 查看數據表（PDF） - Infineon Technologies

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SGP04N60

Fast IGBT in NPT-technology

Infineon Technologies 

SGP04N60, SGB04N60

SGD04N60, SGU04N60

100ns

td(off)

tf

td(off)

100ns tf

td(on)

td(on)

tr

10ns

0A

2A

4A

6A

8A 10A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, RG = 67Ω,

Dynamic test circuit in Figure E)

tr

10ns

0Ω

50Ω 100Ω 150Ω 200Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C, VCE = 400V,

VGE = 0/+15V, IC = 4A,

Dynamic test circuit in Figure E)

td(off)

100ns

tf

td(on)

tr

10ns

0°C

50°C

100°C

150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 400V, VGE = 0/+15V,

IC = 4A, RG = 67Ω,

Dynamic test circuit in Figure E)

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

max.

typ.

2.5V

min.

2.0V

-50°C 0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.2mA)

6

Jul-02

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