SH8M13 查看數據表（PDF） - ROHM Semiconductor
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SH8M13 Datasheet PDF : 11 Pages
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SH8M13
1000
100
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
VGS= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
10
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
0.1
Ta=25°C
Ta=-25°C
0.01
0
1000
100
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Switching Characteristics
Ta=25°C
tf
VDD=15V
VGS=10V
td(off)
RG=10W
Pulsed
td(on)
10
tr
1
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Data Sheet
Fig.8 Forward Transfer Admittance
vs. Drain Current
10
VDS= 10V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
100
Ta=25°C
Pulsed
75
ID= 3.0A
ID= 6.0A
50
25
0
0
10
2
4
6
8
10
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Dynamic Input Characteristics
8
6
4
Ta=25°C
VDD= 15V
2
ID= 6.0A
RG=10W
Pulsed
0
0
2
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
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5/10
2011.05 - Rev.A
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