SI3230MPPQX-EVB 查看數據表（PDF） - Silicon Laboratories

零件编号

产品描述 (功能)

生产厂家

SI3230MPPQX-EVB

PROSLIC® PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION

Silicon Laboratories 

Si3230

Table 4. Linefeed Characteristics (Continued)

(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)

Parameter

Symbol

Test Condition

Min Typ Max Unit

Trapezoidal Ring Crest

Factor Accuracy

Crest factor = 1.3

–.05

—

.05

Sinusoidal Ring Crest

RCF

Factor

1.35

—

1.45

Ringing Frequency Accuracy

Ringing Cadence Accuracy

Calibration Time

Power Alarm Threshold

Accuracy

f = 20 Hz

–1

—

1

%

Accuracy of ON/OFF Times –50

—

50

ms

↑CAL to ↓CAL Bit

—

—

600

ms

At Power Threshold = 300 mW –25

—

25

%

*Note: DC resistance round trip; 160 Ω corresponds to 2 kft 26 gauge AWG.

Table 5. Monitor ADC Characteristics

(VDDA, VDDD = 3.13 to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Differential Nonlinearity

(6-bit resolution)

Integral Nonlinearity

(6-bit resolution)

Gain Error (voltage)

DNLE

INLE

–1/2

—

–1

—

—

—

1/2

LSB

1

LSB

10

%

Gain Error (current)

—

—

20

%

Table 6. Si3230 DC Characteristics, VDDA = VDDD = 5.0 V

(VDDA,VDDD = 4.75 V to 5.25 V, TA = 0 to 70°C for K-Grade, –40 to 85°C for B-Grade)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

High Level Input Voltage

VIH

0.7 x VDDD —

—

V

Low Level Input Voltage

VIL

—

—

0.3 x VDD

V

D

High Level Output Voltage VOH DIO1,DIO2,SDITHRU:IO = –4 mA VDDD – 0.6 —

—

V

SDO:IO = –8 mA

DOUT: IO = –40 mA

VDDD – 0.8 —

—

V

Low Level Output Voltage VOL

DIO1,DIO2,DOUT,SDITHRU:

—

IO = 4 mA

SDO,INT:IO = 8 mA

—

0.4

V

Input Leakage Current

IL

–10

—

10

µA

8

Preliminary Rev. 0.96

Share Link: