SI3861DV 查看數據表（PDF） - Fairchild Semiconductor
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SI3861DV Datasheet PDF : 4 Pages
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August 2001
Si3861DV
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 2.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SuperSOTTM-6
package.
Applications
• Load switch
• Power management
Features
• –2.8 A, –8 V.
RDS(ON) = 55 mΩ @ VGS = –4.5 V
RDS(ON) = 70 mΩ @ VGS = –2.5 V
RDS(ON) = 100 mΩ @ VGS = –1.8 V
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low RDS(ON)
D2
S1
D1
SuperSOT TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
Vin,R1 4
ON/OFF 5
R1,C1 6
Q2
3 Vout,C1
2 Vout,C1
Q1
1 R2
See Application Circuit
Equivalent Circuit
IN
+ V DROP –
OUT
ON/OFF
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VIN
VON/OFF
Maximum Input Voltage
High level ON/OFF voltage range
ILoad
Load Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Maximum Power Dissipation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.861
Si3861DV
7’’
Ratings
±8
–0.5 to 8
–2.8
–9
0.7
–55 to +150
180
60
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
Si3861DV Rev B(W)
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