SI4511DY-T1-GE3(2009) 查看數據表（PDF） - Vishay Semiconductors
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SI4511DY-T1-GE3 Datasheet PDF : 8 Pages
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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 V thru 4 V
3V
32
32
Si4511DY
Vishay Siliconix
24
24
16
8
2V
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
16
TC = 125 °C
8
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
2000
0.015
0.010
VGS = 4.5 V
0.005
VGS = 10 V
1600
Ciss
1200
800
Coss
Crss
400
0.000
0
8
16
24
32
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
8
VDS = 10 V
ID = 9.6 A
6
0
0
1.6
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.4
VGS = 10 V
ID = 9.6 A
1.2
4
1.0
2
0.8
0
0 3 6 9 12 15 18 21 24
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72223
S09-0867-Rev. E, 18-May-09
www.vishay.com
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