SI4511DY-T1-GE3(2009) 查看數據表（PDF） - Vishay Semiconductors

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SI4511DY-T1-GE3
(Rev.:2009)

N- and P-Channel 20-V (D-S) MOSFET

Vishay Semiconductors 

Si4511DY

Vishay Siliconix

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

10 -4

10 -3

2

1

Duty Cycle = 0.5

Notes:

P DM

t1

t2

1. Duty Cycle, D =

t1

t2

2. Per Unit Base = RthJA = 85 °C

3. TJM − TA = PDMZthJA(t)

4. Surface Mounted

10 -2

10 -1

1

10

100

600

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

10 -4

10 -3

10 -2

10 -1

1

10

Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Document Number: 72223

S09-0867-Rev. E, 18-May-09

www.vishay.com

5

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