SI4511DY-T1 查看數據表（PDF） - Vishay Semiconductors
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SI4511DY-T1 Datasheet PDF : 8 Pages
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Si4511DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
3000
P-CHANNEL
Capacitance
0.08
0.06
0.04
VGS = 4.5 V
0.02
VGS = 2.5 V
0.00
0
8
16
24
32
40
ID − Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 6.2 A
4
2500
Ciss
2000
1500
1000
Coss
500
Crss
0
0
4
8
12
16
20
VDS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 6.2 A
1.4
3
1.2
2
1.0
1
0.8
0
0
3
6
9
12
15
18
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
TJ = 150_C
10
TJ = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
ID = 6.2 A
0.04
0.02
1
0.0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
www.vishay.com
6
0.00
0
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
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