SI4532CDY-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SI4532CDY-T1-GE3 Datasheet PDF : 15 Pages
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Si4532CDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
4
3
2
1
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
3.5
1.5
2.8
1.2
2.1
0.9
1.4
0.6
0.7
0.3
0.0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
Document Number: 64805
10
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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