SI4532CDY-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SI4532CDY-T1-GE3 Datasheet PDF : 15 Pages
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Si4532CDY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15
2.0
VGS = 10 V thru 6 V
VGS = 5 V
12
1.5
9
6
3
0
0.0
0.20
VGS = 4 V
VGS = 3 V
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.0
TC = 25 °C
0.5
TC = 125 °C
TC = - 55 °C
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
600
0.15
0.10
VGS = 4.5 V
VGS = 10 V
450
Ciss
300
0.05
0.00
0
3
6
9
12
15
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 2.5 A
8
6
4
VDS = 15 V
VDS = 7.5 V
VDS = 22.5 V
2
150
Coss
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 3.2 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 64805
8
S11-0652-Rev. B, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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