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SI5324 查看數據表(PDF) - Silicon Laboratories

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SI5324 Datasheet PDF : 72 Pages
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Si5324
Table 2. DC Characteristics (Continued)
(VDD = 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 °C)
Parameter
Output Drive Current
(CMOS driving into
CKOVOL for output low
or CKOVOH for output
high. CKOUT+ and
CKOUT– shorted
externally)
Symbol
CKOIO
2-Level LVCMOS Input Pins
Test Condition
ICMOS[1:0] = 11
VDD = 1.8 V
ICMOS[1:0] = 10
VDD = 1.8 V
ICMOS[1:0] = 01
VDD = 1.8 V
ICMOS[1:0] = 00
VDD = 1.8 V
ICMOS[1:0] = 11
VDD = 3.3 V
ICMOS[1:0] = 10
VDD = 3.3 V
ICMOS[1:0] = 01
VDD = 3.3 V
ICMOS[1:0] = 00
VDD = 3.3 V
Min
Typ
7.5
5.5
3.5
1.75
32
24
16
8
Max
Unit
mA
mA
mA
mA
mA
mA
mA
mA
Input Voltage Low
VIL
VDD = 1.71 V
VDD = 2.25 V
0.5
V
0.7
V
Input Voltage High
VIH
VDD = 2.97 V
VDD = 1.89 V
0.8
V
1.4
V
VDD = 2.25 V
1.8
V
VDD = 3.63 V
2.5
V
Notes:
1. Current draw is independent of supply voltage
2. No under- or overshoot is allowed.
3. LVPECL outputs require nominal VDD 2.5 V.
4. This is the amount of leakage that the 3-Level inputs can tolerate from an external driver. See Si53xx Family Reference
Manual for more details.
5. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 622.08 MHz.
Rev. 1.1
7

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