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SI5324E-C-GM 查看數據表(PDF) - Silicon Laboratories

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SI5324E-C-GM Datasheet PDF : 72 Pages
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Si5324
Table 2. DC Characteristics (Continued)
(VDD = 1.8 ± 5%, 2.5 ±10%, or 3.3 V ±10%, TA = –40 to 85 °C)
Parameter
3-Level Input Pins4
Input Voltage Low
Input Voltage Mid
Input Voltage High
Input Low Current
Input Mid Current
Input High Current
Symbol
VILL
VIMM
VIHH
IILL
IIMM
IIHH
Test Condition
See Note 4
See Note 4
See Note 4
Min
Typ
Max
Unit
0.15 x VDD
V
0.45 x
0.55 x VDD
V
VDD
0.85 x
V
VDD
–20
µA
–2
+2
µA
20
µA
LVCMOS Output Pins
Output Voltage Low
VOL
IO = 2 mA
VDD = 1.71 V
0.4
V
Output Voltage Low
Output Voltage High
VOH
Output Voltage High
IO = 2 mA
VDD = 2.97 V
0.4
V
IO = –2 mA
VDD
V
VDD = 1.71 V
0.4
IO = –2 mA
VDD
V
VDD = 2.97 V
0.4
Notes:
1. Current draw is independent of supply voltage
2. No under- or overshoot is allowed.
3. LVPECL outputs require nominal VDD 2.5 V.
4. This is the amount of leakage that the 3-Level inputs can tolerate from an external driver. See Si53xx Family Reference
Manual for more details.
5. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 622.08 MHz.
8
Rev. 1.1

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