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SI5328 查看數據表(PDF) - Silicon Laboratories

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SI5328 Datasheet PDF : 70 Pages
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Si5328
Table 2. DC Characteristics (Continued)
(VDD = 2.5 V ±10% or 3.3 V ±10%, TA = –40 to 85 °C)
Parameter
3-Level Input Pins4
Symbol
Test Condition
Input Voltage Low
VILL
Input Voltage Mid
VIMM
Input Voltage High
VIHH
Input Low Current
IILL
Input Mid Current
IIMM
Input High Current
IIHH
LVCMOS Output Pins
See Note 4
See Note 4
See Note 4
Min
Typ
Max
Unit
0.45 x
VDD
0.85 x
VDD
–20
–2
0.15 x VDD
V
0.55 x VDD
V
V
µA
+2
µA
20
µA
Output Voltage Low
VOL
IO = 2 mA
VDD = 2.25 V
0.4
V
Output Voltage Low
IO = 2 mA
VDD = 2.97 V
0.4
V
Output Voltage High
VOH
IO = –2 mA
VDD = 2.25 V
VDD –0.4
V
Output Voltage High
IO = –2 mA
VDD = 2.97 V
VDD –0.4
V
Disabled Leakage
IOZ
Current
RSTb = 0
–100
100
µA
Notes:
1. Current draw is independent of supply voltage
2. No under- or overshoot is allowed.
3. LVPECL, CML, LVDS and low-swing LVDS measured with Fo = 312.5 MHz.
4. This is the amount of leakage that the 3-Level inputs can tolerate from an external driver. See Si53xx Family
Reference Manual for more details.
8
Rev. 1.0

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