125NS20 查看數據表（PDF） - Naina Semiconductor ltd.
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125NS20 Datasheet PDF : 2 Pages
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Naina Semiconductor Ltd.
125NS(R)
Standard Recovery Diodes (Stud and Flat Base Type), 125A
Features
• Diffused Series
• High Current Surge Capability
• Available in Normal and Reverse polarity
• Metric and UNF thread type
Electrical Specifications (TA = 25oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV) Maximum avg. forward current @ TA = 150oC 125
A
VFM
Maximum peak forward voltage drop @
rated IF(AV)
IFSM
Maximum peak one cycle (non-rep) surge
current @ 10 msec
I2t
Maximum I2t rating (non-rep) for 5 to 10
msec
1.3
V
2600 A
30000 A2sec
DO-205AA (DO-8)
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type Voltage
number Code
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS), Maximum
RMS reverse
voltage
(V)
10
100
70
20
200
140
40
400
280
60
600
420
125NS(R)
80
800
560
100
1000
700
120
1200
840
140
1400
980
160
1600
1120
VR, Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
IR(AV), Maximum
avg. reverse
leakage current
(µA)
200
Thermal & Mechanical Specifications (TA = 25oC, unless otherwise noted)
Symbol
Parameters
Rth(JC)
Maximum thermal resistance, junction to case
TJ
Operating junction temperature range
Tstg
Storage temperature
F
Mounting torque (non-lubricated threads)
W
Approximate allowable weight
Values
0.3
-65 to 150
-65 to 200
2.0 (min) – 3.0 (max)
150
Units
oC/W
oC
oC
G
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
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