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SZSMF11AT1G 查看數據表(PDF) - ON Semiconductor

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SZSMF11AT1G Datasheet PDF : 6 Pages
1 2 3 4 5 6
SMF5.0AT1G Series, SZSMF5.0AT1G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Maximum Ppk Dissipation (PW10/1000 ms) (Note 1) SMF5.0A SMF58A
Ppk
200
W
Maximum Ppk Dissipation @ TA = 25°C, (PW8/20 ms) (Note 2)
Ppk
1000
W
DC Power Dissipation
@ TA = 25°C (Note 3)
Derate above 25°C
Thermal Resistance, JunctiontoAmbient (Note 3)
°PD°
RqJA
385
°mW
4.0
mW/°C
325
°C/W
Thermal Resistance, JunctiontoLead (Note 3)
RqJcathode
26
°C/W
Operating and Storage Temperature Range
TJ, Tstg
55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse at TA = 25°C, per waveform of Figure 2.
2. Nonrepetitive current pulse at TA = 25°C, per waveform of Figure 3.
3. Mounted with recommended minimum pad size, DC board FR4.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 12 A)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniDirectional TVS
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