SMTPB81 查看數據表（PDF） - STMicroelectronics
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SMTPB81 Datasheet PDF : 5 Pages
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SMTPBxxx
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
P
IPP
ITSM
dV/dt
Tstg
Tj
TL
Parameter
Power dissipation
Tlead = 50 °C
Peak pulse current
10/1000 µs
8/20 µs
2/10 µs
Non repetitive surge peak on-state
current
tp = 20 ms
Critical rate of rise of off-state voltage
VRM
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s.
Value
5
100
250
500
50
5
- 55 to + 150
+ 150
+ 260
Unit
W
A
A
KV/µs
°C
°C
°C
THERMAL RESISTANCES
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to leads
Junction to ambient.
On printed circuit with standard footprint dimensions.
ELECTRICAL CHARACTERISTICS (Tamb =25°C)
Symbol
VRM
IRM
VR
VBR
VBO
IH
IBO
IPP
C
Parameter
Stand-off voltage
Leakage current at stand-off voltage
ContinuousReverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance
Value
20
75
Unit
°C/W
°C/W
Type
Marking IRM @ VRM
max.
IR @ VR
max.
note1
VBO @ IBO
max. max.
note2
IH
min.
note3
C
typ.
note4
Laser µA
V
SMTPB62 W07
2
56
SMTPB68 W11
2
61
SMTPB120 W21
2
108
SMTPB200 W31
2
180
SMTPB270 W43
2
243
All parameters tested at 25°C, except where indicated.
Note 1: IR measured at VR guarantees VBRmin ≥ VR
Note 2: Measured at 50 Hz (1 cycle) - See test circuit 1.
µA
V
V
mA
mA
pF
50
62
82
800
150
160
50
68
90
800
150
160
50
120
160
800
150
140
50
200
267
800
150
130
50
270
360
800
150
120
Note 3: See test circuit 2.
Note 4: VR = 1V, F = 1MHz. Refer to fig 3 for C versus VR.
2/5
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