UT61L5128MC-10(2002) 查看數據表（PDF） - Utron Technology Inc
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UT61L5128MC-10 Datasheet PDF : 10 Pages
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UTRON
Preliminary Rev. 1.1
UT61L5128
512K X 8 BIT HIGH SPEED CMOS SRAM
DATA RETENTION CHARACTERISTICS (TA = 0℃ to +70℃)
PARAMETER
SYMBOL
Vcc for Data Retention VDR
Data Retention Current IDR
Chip Disable to Data
Retention Time
tCDR
Recovery Time
tR
TEST CONDITION
CE ≧VCC-0.2V ,
Vcc=2V
CE ≧VCC-0.2V ,
See Data Retention Waveforms (below)
MIN. MAX. UNIT
2.0 3.6 V
-
3 mA
0
- ms
5
- ms
Low Vcc DATA RETENTION WAVEFORM
Data Retention Mode
VDR ≧ 2V
VCC
3.0
tCDR
CE
VIH
CE ≧ VCC-0.2V
3.0
tR
VIH
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
7
P80061
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