UT61L5128MC-12 查看數據表（PDF） - Utron Technology Inc

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UT61L5128MC-12

512K X 8 BIT HIGH SPEED CMOS SRAM

Utron Technology Inc 



Rev. 1.0

UTRON

UT61L5128

512K X 8 BIT HIGH SPEED CMOS SRAM

FEATURES

Single 3.3V power supply

Fast access time : 10/12/15 ns

CMOS Low operating power

All inputs and outputs TTL compatible

Fully static operation

Three state outputs

Easy memory expansion with CE and OE

options.

Package : 44-pin 400mil TSOP-Ⅱ

FUNCTIONAL BLOCK DIAGRAM

A0-A18

Vcc

GND

I/O0-I/O7

DECODER

I/O DATA

CIRCUIT

512K× 8

MEMORY

ARRAY

COLUMN I/O

CE

CONTROL

OE

CIRCUIT

WE

PIN DESCRIPTION

SYMBOL

A0 - A18

I/O1 - I/O8

CE

WE

OE

NC

Vcc

Vss

DESCRIPTION

Address Inputs

Data Inputs/Outputs

Chip Enable Input

Write Enable Input

Output Enable Input

No Connection

Power supply

Ground

GENERAL DESCRIPTION

The UT61L5128 is a 4,194,304-bit high speed

CMOS static random access memory organized as

524,288 words by 8 bits. It is fabricated using high

performance, high reliability CMOS technology.

The UT61L5128 is designed for high speed system

applications. It is particularly suited for use in

high-density high-speed system applications.

The UT61L5128 operates from a single 3.3V

power supply and all inputs and outputs are fully

TTL compatible.

PIN CONFIGURATION

NC

1

44

NC

NC

2

43

NC

A0

3

42

NC

A1

4

41

A18

A2

5

A3

6

40

A17

39

A16

A4

7

38

A15

CE

8

I/O0

9

37

OE

36

I/O7

I/O1

Vcc

10

11

UT61L5128 35

34

I/O6

Vss

Vss

12

33

Vcc

I/O2

13

32

I/O5

I/O3

14

31

I/O4

WE

15

A5

16

A6

17

A7

18

A8

19

A9

20

NC

21

NC

22

30

A14

29

A13

28

A12

27

A11

26

A10

25

NC

24

NC

23

NC

TSOP-II

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80061

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