UT62W1024(2003) 查看數據表（PDF） - Utron Technology Inc
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UT62W1024 Datasheet PDF : 15 Pages
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UTRON
Rev. 1.1
UT62W1024
128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS (Ⅱ) (VCC = 4.5V~5.5V, Vss=0V, TA = 0℃ to 70℃)
PARAMETER
Input High Voltage
Input Low Voltage
SYMBOL TEST CONDITION
VIH*1
VIL*2
Input Leakage Current IIL
VSS ≦VIN ≦VCC
Output Leakage Current IOL
VSS ≦VI/O≦VCC
CE =VIH or CE2=VIL or
OE =VIH or WE =VIL
Output High Voltage
VOH
Output Low Voltage
VOL
Average Operating
ICC
Power Supply Courrent
IOH=-1mA
IOL= 4mA
Cycle time =Min. 100% Duty, -35
CE =VIL, CE2 = VIH,
-55
CL=100PF
-70
Standby Power
Supply Current
ICC1 Cycle time = 1µs, 100% Duty,
CE ≦0.2V,CE2≧VCC-0.2V,
II/O = 0mA
ISB
CE =VIH or CE2 = VIL
ISB1
CE ≧VCC-0.2V or
CE2≦0.2V
-L
-
LL
*1. VIH(max)=Vcc+3.0v for pulse width less than 10ns.
*2. VIL(min)=Vss-3.0v for pulse width less than 10ns.
*3. Those parameters are for reference only under 50℃
MIN.
2.2
- 0.5
-1
-1
2.4
-
-
-
-
-
-
-
-
TYP.
-
-
-
MAX.
VCC+0.5
0.8
1
UNIT
V
V
µA
-
1
µA
-
-
V
-
0.4
V
60
100
mA
50
85
mA
-40
70
mA
-
5
mA
-
1.0
mA
100
2.5
20*3
µA
0.5
40
10*3
µA
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
4
P80056
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