UT62W1024SC-35L 查看數據表（PDF） - Utron Technology Inc

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UT62W1024SC-35L

128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM

Utron Technology Inc 



UTRON

UT62W1024

Rev. 1.0

128K X 8 BIT WIDE RANGE LOW POWER CMOS SRAM

DC ELECTRICAL CHARACTERISTICS (Ⅱ) (VCC = 4.5V~5.5V, Vss=0V, TA = 0℃ to 70℃)

PARAMETER

SYMBOL TEST CONDITION

MIN. TYP. MAX. UNIT

Input High Voltage

VIH

Input Low Voltage

VIL

Input Leakage Current IIL

Output Leakage Current IOL

VSS ≦VIN ≦VCC

VSS ≦VI/O≦VCC

CE 1 =VIH or CE2 = VIL or

2.2

- 0.5

-1

- VCC+0.5 V

-

0.8

V

-

1

µA

-1 -

1

µA

OE = VIH or WE = VIL

Output High Voltage

VOH

Output Low Voltage

VOL

Average Operating

ICC

Power Supply Courrent

IOH = - 1mA

2.4 -

-

V

IOL= 4mA

-

-

0.4

V

Cycle time =Min. 100% Duty, -35 - 60 100 mA

CE 1 =VIL, CE2 = VIH,

-55 - 50 85 mA

, CL=100PF

-70 - -40 70 mA

Standby Power

Supply Current

ICC1

Cycle time = 1µs, 100% Duty,

. CE 1 ≦0.2V,CE2≧VCC-0.2V,

-

-

5 mA

II/O = 0mA

ISB

CE 1 =VIH or CE2 = VIL

-

-

1.0 mA

ISB1

CE 1 ≧VCC-0.2V or

.CE2≦0.2V

100

- L - 2.5 20* µA

-

LL

-

0.5

40

10*

µA

*Those parameters are for reference only under 50℃

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

3

P80056

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