UT62L5128BS-100LI 查看數據表（PDF） - Utron Technology Inc

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UT62L5128BS-100LI

512K X 8 BIT LOW POWER CMOS SRAM

Utron Technology Inc 



UTRON

Preliminary Rev. 0.7

FEATURES

Access time : 55/70/100 ns

CMOS Low operating power

Operating : 45/35/25mA (max.)

Standby : 20µA (typ.) L-version

3µA (typ.) LL-version

Single 2.7V~3.6V power supply

Industrial Temperature : -40℃~85℃

All inputs and outputs TTL compatible

Fully static operation

Three state outputs

Data retention voltage : 1.5V (min)

Package : 32-pin 450 mil SOP

32-pin 8mm×20mm TSOP-I

32-pin 8mm×13.4mm STSOP

36-pin 6mm×8mm TFBGA

FUNCTIONAL BLOCK DIAGRAM

UT62L5128(I)

512K X 8 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION

The UT62L5128 is a 4,194,304-bit low power

CMOS static random access memory organized as

524,288 words by 8 bits. It is fabricated using high

performance, high reliability CMOS technology.

The UT62L5128 operates from a wide range

2.7V~3.6V power supply and all inputs and

outputs are fully TTL compatible.

The UT62L5128 supports industrial operating

temperature range, and supports low data

retention voltage for battery back-up operation

with low data retention current.

A0-A18

Vcc

Vss

DECODER

512K × 8

MEMORY

ARRAY

I/O1-I/O8

I/O DATA

CIRCUIT

COLUMN I/O

CE

CONTROL

OE

CIRCUIT

WE

UTRON TECHNOLOGY INC.

1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.

TEL: 886-3-5777882 FAX: 886-3-5777919

1

P80052

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