G1746 查看數據表（PDF） - Hamamatsu Photonics

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G1746

GaAsP photodiode

Hamamatsu Photonics 

sShunt resistance vs. ambient temperature

10 TΩ

(Typ. VR=10 mV)

1 TΩ

100 GΩ

10 GΩ

G1746

1 GΩ

100 MΩ

G1747

10 MΩ

-20

0

20

40

60

AMBIENT TEMPERATURE (˚C)

80

KGPDB0043EA

GaAsP photodiode G1746, G1747

sShort circuit current linearity

(Typ. Ta=25 ˚C, A light source fully illuminated)

100

10-2

RL=100 Ω

10-4

10-6

10-8

10-10

10-12

10-14

Refer to NEP value in characteristic table.

10-1160-16 10-14 10-12 10-10 10-8 10-6 10-4 10-2 100

INCIDENT LIGHT LEVEL (lx)

KGPDB0008EA

sDimensional outlines (unit: mm)

➀ G1746

WINDOW

5.9 ± 0.1

9.1 ± 0.2

8.1 ± 0.1

PHOTOSENSITIVE

SURFACE

0.45

LEAD

5.08 ± 0.2

CONNECTED

TO CASE

KGPDA0006EA

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