E50A27VBR 查看數據表（PDF） - KEC
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E50A27VBR Datasheet PDF : 1 Pages
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SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
·Average Forward Current : IO=50A.
·Zener Voltage : 27V(Typ.)
POLARITY
E50A27VBS (+ Type)
E50A27VBR (- Type)
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
IF(AV)
IFSM
Non-Repetitive Peak
Reverse Surge Current (10mS)
IRSM
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
VRSM
VRM
Tj
Storage Temperature Range
Tstg
RATING
50
380 (60Hz)
55
22
20
-40～215
-40～215
UNIT
A
A
A
V
V
℃
℃
E50A27VBS, E50A27VBR
STACK SILICON DIFFUSED DIODE
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage
VF
Zener Voltage
VZ
Reverse Current
IR
Transient Thermal Resistance
Breakdown Voltage
ΔVF
Vbr
Temperature Coefficient
αT
Reverse Leakage Current Under
High Temperature
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IZ=10mA
VR=20V
IFM=100A, IM=100mA, Pw=100mS
Irsm=55A, Pw=10mS
IZ=10mA
Ta=150℃, VR=20V
DC total junction to case
MIN.
-
24
-
-
-
-
-
-
TYP.
-
27
-
-
-
15.7
-
-
MAX.
1.05
29
0.2
60
34
-
UNIT
V
V
μA
mV
V
mV/℃
100
μA
0.6
℃/W
2002. 4. 16
Revision No : 5
1/1
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