MPSA70 查看數據表（PDF） - Motorola => Freescale

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MPSA70

Amplifier Transistor

Motorola => Freescale 

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Amplifier Transistor

PNP Silicon

Order this document

by MPSA70/D

MPSA70

COLLECTOR

3

2

BASE

1

EMITTER

1

2

3

MAXIMUM RATINGS

Rating

Symbol

Value

Collector – Emitter Voltage

Emitter – Base Voltage

Collector Current — Continuous

Total Device Dissipation @ TA = 25°C

Derate above 25°C

VCEO

VEBO

IC

PD

–40

–4.0

–100

625

5.0

Total Device Dissipation @ TC = 25°C

Derate above 25°C

PD

1.5

12

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Thermal Resistance, Junction to Ambient

RqJA

200

Thermal Resistance, Junction to Case

RqJC

83.3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = –1.0 mAdc, IB = 0)

Emitter – Base Breakdown Voltage

(IE = –100 µAdc, IC = 0)

Collector Cutoff Current

(VCB = –30 Vdc, IE = 0)

v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.

Unit

Vdc

Vdc

mAdc

mW

mW/°C

Watts

mW/°C

°C

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

Unit

°C/W

°C/W

Symbol

Min

Max

Unit

V(BR)CEO –40

V(BR)EBO –4.0

ICBO

—

—

—

–100

Vdc

Vdc

nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1

© Motorola, Inc. 1996

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