DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SP3011 查看數據表(PDF) - Littelfuse, Inc

零件编号
产品描述 (功能)
生产厂家
SP3011 Datasheet PDF : 4 Pages
1 2 3 4
TVS Diode Arrays (SPAFamily of Products)
Low Capacitance ESD Protection - SP3011 Series
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
IPP
TOP
TSTOR
Peak Current (tp=8/20μs)
Operating Temperature
Storage Temperature
3.0
A
-40 to 85
°C
-60 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
Test Conditions
Reverse Standoff Voltage
Reverse Leakage Current
Clamp Voltage1
Dynamic Resistance
ESD Withstand Voltage1
VRWM
ILEAK
VC
RDYN
VESD
IR ≤ 1µA
VR=5V, Any I/O to GND
IPP=1A, tp=8/20µs, Fwd
IPP=2A, tp=8/20µs, Fwd
(VC2-VC1) / (IPP2-IPP1)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Diode Capacitance1
CI/O-GND
Reverse Bias=0V
Note: 1 Parameter is guaranteed by design and/or device characterization.
Min
Typ
Max
6.0
0.1
0.5
11.0
12.5
1.5
±8
±15
0.4
Capacitance vs. Bias Voltage
0.5
Insertion Loss (S21) I/O to GND
0
0.4
-5
-10
0.3
-15
0.2
-20
0.1
-25
0.0
0.0
1.0
2.0
3.0
4.0
5.0
Bias Voltage (V)
-30
10
100
1000
Frequency (MHz)
Units
V
µA
V
V
Ω
kV
kV
pF
10000
Clamping Voltage vs. IPP
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
1.0
1.5
2.0
2.5
Peak Pulse Current - IPP (A)
Pulse Waveform
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
3.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
SP3011 Series
110
Revision: August 8, 2011
©2011 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]