SPA03N60C3 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
SPA03N60C3 Datasheet PDF : 14 Pages
| |||
Final data
SPP03N60C3, SPB03N60C3
SPA03N60C3
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s 4)
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
RthJC
RthJC_FP
RthJA
RthJA_FP
RthJA
Tsold
Values
Unit
min. typ. max.
-
-
3.3 K/W
-
-
4.1
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=3.2A
- 700
breakdown voltage
-V
-
Gate threshold voltage
VGS(th) ID=135µA, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
µA
Tj=25°C
-
0.5
1
Tj=150°C
-
-
70
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
VGS=30V, VDS=0V
VGS=10V, ID=2A
Tj=25°C
Tj=150°C
-
- 100 nA
Ω
- 1.26 1.4
-
3.8
-
Gate input resistance
RG
f=1MHz, open drain
-
10
-
Page 2
2003-10-02
Share Link: 