2N0303 查看數據表（PDF） - Infineon Technologies
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2N0303 Datasheet PDF : 8 Pages
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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
-
0.3 0.5 K/W
-
-
62
-
-
62
-
-
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = VDS
ID=250µA
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance 4)
VGS=10V, ID=80A
VGS=10V, I D=80A, SMD version
V(BR)DSS 30
-
-V
VGS(th)
2.1
3
4
IDSS
IGSS
µA
- 0.01 1
-
1 100
-
1 100 nA
RDS(on)
mΩ
-
2.6 3.4
-
2.3 3.1
1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 307A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for
drain connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
Page 2
2003-05-09
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