5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP80N03S2-03
190 Ptot = 300W
A
i
h
160
140
120
100
80
VGS [V]
a
4.0
b
4.2
c
4.4
gd
4.6
e
4.8
f
5.0
fg
5.2
h
5.4
i
10.0
e
60
d
40
c
20
b
a
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
320
A
SPI80N03S2-03
SPP80N03S2-03,SPB80N03S2-03
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP80N03S2-03
12
mΩ
c
10
d
e
f
g
9
8
7
6
5
4
h
3
i
2
VGS [V] =
1
c de f
4.4 4.6 4.8 5.0
gh i
5.2 5.4 10.0
0
0
20 40
60 80 100 120 A 150
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
180
S
240
200
160
120
80
40
0
0
1
2
3
4
5
V
7
VGS
Page 5
140
120
100
80
60
40
20
0
0
40
80 120 160 A
240
ID
2003-05-09