2N03L06 查看數據表（PDF） - Infineon Technologies

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2N03L06

OptiMOS® Power-Transistor

Infineon Technologies 

Electrical Characteristics

Parameter

Dynamic Characteristics

Transconductance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Gate plateau voltage

Reverse Diode

Inverse diode continuous

forward current

Inv. diode direct current, pulsed

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

SPI80N03S2L-06

SPP80N03S2L-06,SPB80N03S2L-06

Symbol

Conditions

Values

Unit

min. typ. max.

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS≥2*ID *RDS(on)max, 44

ID =80A

VGS=0V, VDS =25V,

-

f=1MHz

-

-

VDD =15V, VGS =10V,

-

ID =20A,

-

RG=3.6Ω

-

-

88 - S

1900 2530 pF

740 990

175 265

10 15 ns

23 35

73 109

61 91

Qgs

VDD =24V, ID =80A

Qgd

Qg

VDD =24V, ID =80A,

VGS=0 to 10V

V(plateau) VDD =24V, ID =80A

-

6

8 nC

-

18 27

-

51 68

- 3.1 - V

IS

ISM

VSD

trr

Qrr

TC=25°C

VGS=0V, IF=80A

VR=15V, I F=lS,

diF/dt=100A/µs

-

- 80 A

-

- 320

- 0.9 1.3 V

- 41 52 ns

- 46 58 nC

Page 3

2003-05-09

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