SPD03N60S5 查看數據表（PDF） - Infineon Technologies

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SPD03N60S5

Cool MOS™ Power Transistor

Infineon Technologies 

SPU03N60S5

SPD03N60S5

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Inverse diode continuous

forward current

IS

TC=25°C

-

-

3.2 A

Inverse diode direct current,

ISM

pulsed

-

-

5.7

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

VSD

trr

Qrr

VGS=0V, IF=IS

VR=350V, IF=IS ,

diF/dt=100A/µs

-

1

1.2 V

- 1000 1700 ns

-

2.3

- µC

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

Value

typ.

typ.

Thermal resistance

Thermal capacitance

Rth1

Rth2

Rth3

Rth4

Rth5

Rth6

0.054

0.103

0.178

0.757

0.682

0.202

K/W

Cth1

Cth2

Cth3

Cth4

Cth5

Cth6

0.00005232

0.0002034

0.0002963

0.0009103

0.002084

0.024

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th ,n

Tamb

Rev. 2.1

Page 4

2004-03-30

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