SPU03N60S5 查看數據表（PDF） - Infineon Technologies
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SPU03N60S5 Datasheet PDF : 10 Pages
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5 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 2 A, VGS = 10 V
SPU03N60S5
8
Ω
SPU03N60S5
SPD03N60S5
6 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
8
A
6
6
5
5
4
4
3
3
2
98%
2
typ
1
1
0
-60 -20 20
60 100 °C
180
Tj
7 Typ. gate charge
VGS = f (QGate)
parameter: ID = 3.2 A pulsed
SPU03N60S5
16
V
0.2 VDS max
12 0.8 VDS max
10
0
0
4
8
12
V
20
VGS
8 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 1 SPU03N60S5
A
10 0
8
6
4
2
0
0 2 4 6 8 10 12 14 16 nC 19
QGate
Rev. 2.1
Page 6
10 -1
10 -2
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6
2 2.4 V 3
VSD
2004-03-30
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