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Q62702-P1630 查看數據表(PDF) - Siemens AG

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Q62702-P1630 Datasheet PDF : 6 Pages
1 2 3 4 5 6
SPL 2Yxx
(SFH 4874x1)
Diode Characteristics
(TA = 25 °C)
Parameter
Symbol
Values
min. typ.
Emission wavelength 1)
λpeak
803
808
840
850
935
940
Spectral width (FWHM) 1)
∆λ
2
Output power 2)
Differential efficiency 2)
Popt
808 nm η
850 nm
940 nm
1.0
0.75 0.95
0.75 0.85
0.70 0.80
Threshold current
808 nm Ith
850 nm
940 nm
0.40 0.45
0.30 0.40
0.30 0.35
Operating current 1)
808 nm Iop
850 nm
940 nm
1.3
1.5
1.3
1.5
1.4
1.6
Operating voltage 1)
Vop
2.0
Differential series resistance
rs
0.2
Characteristic temperature (threshold) 3)
T0
150
Temperature coefficient of operating
Iop/ T
0.5
current
Temperature coefficient of wavelength 4) ∂λ / T 0.25
0.27
Thermal resistance (junction heat sink) Rth JA
10
1) Standard operating conditions refer to 1 W cw measured with NA = 0.6
2) Optical power measurements refer to a detector with NA = 0.6
3) Model for the thermal behavior of threshold current: Ith(T2) = Ith(T1) × exp(T2 T1)/T0
4) Depending on emission wavelength
max.
813
860
945
1.1
1.0
0.9
0.55
0.50
0.40
1.8
1.8
1.8
0.4
0.30
Unit
nm
nm
W
W/A
A
A
V
K
%/K
nm/K
K/W
NTC Thermistor
Parameter
Symbol Typ. Values
Resistance at room temperature (25 °C) RNTC
10
Unit
k
Semiconductor Group
2

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