01N60C3(2004) 查看數據表（PDF） - Infineon Technologies

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01N60C3
(Rev.:2004)

Cool MOS™ Power Transistor

Infineon Technologies 

Rev. 2.0

SPU01N60C3

SPD01N60C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Inverse diode continuous

forward current

IS

TC=25°C

-

-

0.8 A

Inverse diode direct current,

ISM

pulsed

-

-

1.6

Inverse diode forward voltage

Reverse recovery time

Reverse recovery charge

VSD

trr

Qrr

VGS=0V, IF=IS

VR=350V, IF=IS ,

diF/dt=100A/µs

-

1 1.2 V

- 570 970 ns

- 0.75 - µC

Typical Transient Thermal Characteristics

Symbol

Value

Unit Symbol

Value

typ.

typ.

Thermal resistance

Thermal capacitance

Rth1

Rth2

Rth3

Rth4

Rth5

Rth6

0.225

0.395

0.603

0.995

0.691

0.148

K/W

Cth1

Cth2

Cth3

Cth4

Cth5

Cth6

0.00001221

0.00005037

0.0000809

0.0002915

0.001844

0.412

Unit

Ws/K

Ptot (t)

Tj R th1

C th 1

C th 2

Rth,n Tcase External Heatsink

C th ,n

Tamb

Page 4

2004-03-01

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