SSF3610 查看數據表（PDF） - Silikron Semiconductor Co.,LTD.
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SSF3610 Datasheet PDF : 7 Pages
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SSF3610
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
1 1.9
3
V
VGS=4.5V, ID=8A
9.5
13
mΩ
VGS=10V, ID=11A
6.5
9
mΩ
VDS=5V,ID=11A
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
1200
PF
Coss
VDS=25V,VGS=0V,
F=1.0MHz
300
PF
Crss
120
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
t d(on)
10
nS
tr
VDS=15V,VGS=10V,RGEN=6Ω
6.5
nS
td(off)
ID=1A
25
nS
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
tf
9.7
nS
Qg
12
nC
Qgs
VDS=15V,ID=12A,VGS=10V
3.2
nC
Gate-Drain Charge
Qgd
3.8
nC
Body Diode Reverse Recovery Time
T rr
24
nS
IF=12A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Q rr
27
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=2.3A
0.74 1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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