SSF5508 查看數據表（PDF） - Silikron Semiconductor Co.,LTD.
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SSF5508 Datasheet PDF : 5 Pages
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SSF5508
Gate-to-Source reverse leakage
Qg
Total gate charge
Qgs
Gate-to-Source charge
Qgd
Gate-to-Drain("Miller") charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-Off delay time
tf
Fall time
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
— — -100
— 90 —
— 14 — nC
— 24 —
— 18.2 —
— 15.6 —
nS
— 70.5 —
— 13.8 —
— 3150 —
— 300 — pF
— 240 —
VGS=-20V
ID=30A
VDD=30V
VGS=10V
VDD=30V
ID=2A ,RL=15Ω
RG=2.5Ω
VGS=10V
VGS=0V
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
Continuous Source Current .
IS (Body Diode)
—
Pulsed Source Current
ISM (Body Diode) ①
.
—
—
110
—
400
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
—
—
1.3
V TJ=25ْC,IS=68A,VGS=0V ③
－
57
—
nS TJ=25ْC,IF=68A
－
107
—
nC di/dt=100A/μs ③
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 57A, VDD = 27.5V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS test circuit:
BVdss
Gate charge test circuit:
©Silikron Semiconductor CO.,LTD.
2009.12.26
Version : 1.0
page 2of5
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