SSD20N06-90D 查看數據表（PDF） - Secos Corporation.
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SSD20N06-90D Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SSD20N06-90D
N-Ch Enhancement Mode Power MOSFET
19A, 60V, RDS(ON) 94 mΩ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-Resistance a
Forward Transconductance a
Diode Forward Voltage
Static
VGS(th)
1.0
IGSS
-
-
IDSS
-
ID(ON)
34
-
RDS(ON)
-
gfs
-
VSD
-
Dynamic b
-
-
V VDS = VGS, ID = 250μA
-
±100 nA VDS= 0V, VGS= 20V
-
1
VDS= 48V, VGS= 0V
-
25
μA VDS= 48V, VGS= 0V,
TJ= 55°C
-
-
A VDS= 5V, VGS= 10V
-
94
VGS= 10V, ID= 19A
mΩ
-
109
VGS= 4.5V, ID= 18A
22
-
S VDS= 15V, ID= 19A
1.1
-
V IS= 24A, VGS = 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Source-Ddrain Reverse Recovery Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Trr
-
3.6
-
ID= 19 A
-
1.8
-
nC VDS= 15 V
VGS= 4.5 V
-
1.3
-
-
16
-
-
5
-
VDD= 25 V
ID= 24 A
-
23
-
nS RVGL=EN2=510 V
-
3
-
-
50
-
IF=24A,
Di/Dt=100 A/μs
Notes
a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
30-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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