SSR2010JDB 查看數據表（PDF） - Solid State Devices, Inc.
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SSR2010JDB Datasheet PDF : 2 Pages
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
FEATURES:
• PIV: 100 Volts
• Average Output Current 25 Amps
• Low Reverse Leakage Current
• Low Forward Voltage Drop
• Guard Ring for Overvoltage Protection
• Isolated Hermetically Sealed Package
• Custom Lead Forming Available
• Eutectic Die Attach
• Ultrasonic Aluminum Wire Bonds
• 175°C Operating Junction Temperature
• TX, TXV, and Space Level Screening Available.
Consult Factory.
SSR2010J Series
TO-257(J)
20 AMPS
100 VOLTS
SCHOTTKY
RECTIFER
MAXIMUM RATINGS 1/
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current 2/
(Resistive Load, 60 Hz, Sine Wave, TA = 25°C)
Peak Surge Current 2/
(8.3 ms Pulse, Half Sine Wave, Superimposed on Io, Allow Junction to
reach equilibrium between pulses, TA = 25°C)
Operating and Storage Temperature
Maximum Thermal Resistance 2/
(Junction to Case)
Symbol
VRRM
VRWM
VR
IO
Value
100
20
Unit
Volts
Amps
IFSM
300
Amps
TOP & Tstg -65 to +175
RθJC
1.0
°C
°C/W
Available in the Following Configurations:
Rectifier:
SSR2010J, SSR2010JDB, and SSR2010JUB
Common Cathode Centertap: SSR2010CTJ, SSR2010CTJDB, and SSR2010CTJUB (See Data Sheet RS0073)
Common Anode Centertap: SSR2010CAJ, SSR2010CAJDB, and SSR2010CAJUB (See Data Sheet RS0073)
NOTE:
1/ at room temperature, unless otherwise specified
2/ pins 2 and 3 connected together
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0087G
DOC
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